User Guide for Littelfuse models including: DPG30C300PC HiperFRED Extreme Fast Series, DPG30C300PC, HiperFRED Extreme Fast Series, Extreme Fast Series, Fast Series, Series
DPG30C300PC-TRL Littelfuse - РКС Компоненти - РАДІОМАГ
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DocumentDocumentHiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C300PC Marking on Product: DPG30C300PC 1 4 3 DPG30C300PC VRRM I FAV t rr = 300 V = 2x 15 A = 35 ns Backside: cathode Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Package: TO-263 (D2Pak) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a Downloaded from Arrow.com. DPG30C300PC Fast Diode Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current forward voltage drop average forward current VR = 300 V VR = 300 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A TC = 145°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ I RM t rr threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance max. reverse recovery current t = 10 ms; (50 Hz), sine; VR = 0 V VR = 150 V f = 1 MHz reverse recovery time IF = 15 A; VR = 200 V -diF/dt = 200 A/µs TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150 °C TVJ = 175°C Ratings min. typ. max. Unit 300 V 300 V 1 µA 0.08 mA 1.26 V 1.51 V 1.01 V 1.29 V 15 A TVJ = 175°C TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C TVJ = 125 °C 0.69 V 18 m 1.7 K/W 0.25 K/W 90 W 240 A 20 pF 3 A 6.5 A 35 ns 55 ns IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a Package TO-263 (D2Pak) Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature FC mounting force with clip Product Marking Part Number Logo Date Code Location Lot# XXXXXXXXX IXYS yywwZ 123456 Conditions per terminal DPG30C300PC Ratings min. typ. max. Unit 35 A -55 175 °C -55 150 °C -55 150 °C 1.5 g 20 60 N Part description D = Diode P = HiPerFRED G = extreme fast 30 = Current Rating [A] C = Common Cathode 300 = Reverse Voltage [V] PC = TO-263AB (D2Pak) (2) Ordering Standard Alternative Ordering Number DPG30C300PC-TRL DPG30C300PC-TUB Similar Part DPG30C300PB DPG30C300HB Marking on Product DPG30C300PC DPG30C300PC Delivery Mode Tape & Reel Tube Quantity Code No. 800 501901 50 525106 Package TO-220AB (3) TO-247AD (3) Voltage class 300 300 Equivalent Circuits for Simulation I V0 R0 V 0 max R0 max threshold voltage slope resistance * Fast Diode 0.69 14.7 * on die level T VJ = 175°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DPG30C300PC Outlines TO-263 (D2Pak) W A c2 L1 E D A1 123 H Supplier Option 4 D1 L2 L 2x e 10.92 (0.430) c 3x b2 2x b mm (Inches) E1 9.02 (0.355) 1.78 (0.07) Dim. Millimeter min max Inches min max A 4.06 4.83 0.160 0.190 A1 typ. 0.10 typ. 0.004 A2 2.41 0.095 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 D2 2.5 0.098 E 9.65 10.41 0.380 0.410 E1 6.22 8.50 0.245 0.335 e 2,54 BSC 0,100 BSC e1 4.28 0.169 H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 W typ. 0.02 0.040 typ. 0.0008 0.002 All dimensions conform with and/or within JEDEC standard. 3.81 (0.150) 3.05 (0.120) 2.54 (0.100) Recommended min. foot print 1 4 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DPG30C300PC Fast Diode 80 70 60 IF 50 40 [A] 30 TVJ = 25°C 150°C 0.5 0.4 Qrr 0.3 [C] 0.2 TVJ = 125°C VR = 200 V 30 A 15 A 7.5 A 16 14 12 IRM 10 8 [A] 6 IF = 30 A IF = 15 A IF = 7.5 A 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VF [V] Fig. 1 Forward current IF versus VF 0.1 0.0 0 100 200 300 400 500 600 -diF /dt [A/s] Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 4 2 TVJ = 125°C VR = 200 V 0 0 100 200 300 400 500 600 -diF /dt [A/s] Fig. 3 Typ. peak reverse current IRM versus -diF /dt 1.4 1.2 1.0 0.8 Kf 0.6 IRM 0.4 0.2 Qrr 70 60 trr 50 [ns] 40 30 TVJ = 125°C VR = 200 V IF = 30 A 15 A 7.5 A 0.0 0 20 40 60 80 100 120 140 160 TVJ [°C] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 20 0 100 200 300 400 500 600 -diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt 16 400 14 12 VFR 10 8 [V] 6 TVJ = 125°C IF = 15 A VR = 200 V 300 tfr 200 [ns] 4 2 VFR 100 tfr 0 0 0 100 200 300 400 500 600 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 16 1.8 12 Erec 8 [J] IF = 30 A IF = 15 A IF = 7.5 A 1.6 1.4 ZthJC 1.2 [K/W] 1.0 4 TVJ = 125°C VR = 200 V 0 0 100 200 300 400 500 600 -diF/dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt 0.8 0.6 1 10 100 1000 t [ms] Fig. 8 Transient thermal resistance junction to case 10000 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a Downloaded from Arrow.com.