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VISHAY SUM70030E N-Channel MOSFET
FEATURES
- TrenchFET® power MOSFET
- Maximum 175 °C junction temperature
- Very low Qgd reduces power loss from passing through Vplateau
- 100 % Rg and UIS tested
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Power supply
Secondary synchronous rectification - DC/DC converter
- Power tools
- Motor drive switch
- DC/AC inverter
- Battery management
- OR-ing / e-fuse
PRODUCT SUMMARY
| VDS (V) | 100 |
| RDS(on) max. (W) at VGS = 10 V | 0.00288 |
| RDS(on) max. (W) at VGS = 7.5 V | 0.00348 |
| Qg typ. (nC) | 142.4 |
| ID (A) | 150 d |
| Configuration | Single |
ORDERING INFORMATION
| Package | TO-263 |
| Lead (Pb)-free and halogen-free | SUM70030E-GE3 |
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNIT | |
| Drain-source voltage | VDS | 100 | V | |
| Gate-source voltage | VGS | ± 20 | ||
| Continuous drain current (TJ = 150 °C) | TC = 25 °C | ID | 150 d |
A |
| TC = 70 °C | 150 d | |||
| Pulsed drain current (t = 100 μs) | IDM | 500 | ||
| Avalanche current | IAS | 60 | ||
| Single avalanche energy a | L = 0.1 mH | EAS | 180 | mJ |
| Maximum power dissipation a | TC = 25 °C | PD | 375 b | W |
| TC = 125 °C | 125 b | |||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +175 | °C | |
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | LIMIT | UNIT |
| Junction-to-ambient (PCB mount) c | RthJA | 40 | °C/W |
| Junction-to-case (drain) | RthJC | 0.4 |
Notes
- Duty cycle 1 %
- See SOA curve for voltage derating
- When mounted on 1″ square PCB (FR4 material)
- Package limited
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT |
| Static | ||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 100 | – | – | V |
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 μA | 2 | – | 4 | |
| Gate-body leakage | IGSS | VDS = 0 V, VGS = ± 20 V | – | – | ± 250 | nA |
| Zero gate voltage drain current | IDSS | VDS = 100 V, VGS = 0 V | – | – | 1 | μA |
| VDS = 100 V, VGS = 0 V, TJ = 125 °C | – | – | 150 | |||
| VDS = 100 V, VGS = 0 V, TJ = 175 °C | – | – | 5 | mA | ||
| On-state drain current a | ID(on) | VDS ³ 10 V, VGS = 10 V | 120 | – | – | A |
| Drain-source on-state resistance a | RDS(on) | VGS = 10 V, ID = 30 A | – | 0.00240 | 0.00288 | W |
| VGS = 7.5 V, ID = 20 A | – | 0.00290 | 0.00348 | |||
| Forward transconductance a | gfs | VDS = 15 V, ID = 30 A | – | 110 | – | S |
| Dynamic b | ||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 50 V, f = 1 MHz | – | 10 870 | – | pF |
| Output capacitance | Coss | – | 820 | – | ||
| Reverse transfer capacitance | Crss | – | 40 | – | ||
| Total gate charge c | Qg | VDS = 50 V, VGS = 10 V, ID = 20 A | – | 142.4 | 214 |
nC |
| Gate-source charge c | Qgs | – | 46.8 | – | ||
| Gate-drain charge c | Qgd | – | 18.5 | – | ||
| Output charge | Qoss | VDS = 50 V, VGS = 0 V | – | 138 | 207 | |
| Gate resistance | Rg | f = 1 MHz | 0.34 | 1.7 | 3.4 | W |
| Turn-on delay time c | td(on) | VDD = 50 V, RL = 3 W ID @ 10 A, VGEN = 10 V, Rg = 1 W | – | 30 | 60 |
ns |
| Rise time c | tr | – | 13 | 26 | ||
| Turn-off delay time c | td(off) | – | 50 | 100 | ||
| Fall time c | tf | – | 15 | 30 | ||
| Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) | ||||||
| Pulsed current (t = 100 μs) | ISM | – | – | 250 | A | |
| Forward voltage a | VSD | IF = 10 A, VGS = 0 V | – | 0.8 | 1.5 | V |
| Reverse recovery time | trr |
IF = 34 A, di/dt = 100 A/μs | – | 76 | 150 | ns |
| Peak reverse recovery charge | IRM(REC) | – | 4.6 | 5.6 | A | |
| Reverse recovery charge | Qrr | – | 0.205 | 0.24 | μC | |
| Reverse recovery fall time | ta | – | 52 | – | ns | |
| Reverse recovery rise time | tb | – | 24 | – | ||
Notes
- Pulse test; pulse width 300 μs, duty cycle 2 %
- Guaranteed by design, not subject to production testing
- Independent of operating temperature
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C) is a general guideline only to enable the user to get a “ballpark” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics developed from empirical measurements. The latter is valid for the part mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double-sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions
TO-263 (D2PAK): 3-LEAD
| DIM. | INCHES | MILLIMETERS | |||
| MIN. | MAX. | MIN. | MAX. | ||
| A | 0.160 | 0.190 | 4.064 | 4.826 | |
| b | 0.020 | 0.039 | 0.508 | 0.990 | |
| b1 | 0.020 | 0.035 | 0.508 | 0.889 | |
| b2 | 0.045 | 0.055 | 1.143 | 1.397 | |
| c* | Thin lead | 0.013 | 0.018 | 0.330 | 0.457 |
| Thick lead | 0.023 | 0.028 | 0.584 | 0.711 | |
| c1 | Thin lead | 0.013 | 0.017 | 0.330 | 0.431 |
| Thick lead | 0.023 | 0.027 | 0.584 | 0.685 | |
| c2 | 0.045 | 0.055 | 1.143 | 1.397 | |
| D | 0.340 | 0.380 | 8.636 | 9.652 | |
| D1 | 0.220 | 0.240 | 5.588 | 6.096 | |
| D2 | 0.038 | 0.042 | 0.965 | 1.067 | |
| D3 | 0.045 | 0.055 | 1.143 | 1.397 | |
| D4 | 0.044 | 0.052 | 1.118 | 1.321 | |
| E | 0.380 | 0.410 | 9.652 | 10.414 | |
| E1 | 0.245 | – | 6.223 | – | |
| E2 | 0.355 | 0.375 | 9.017 | 9.525 | |
| E3 | 0.072 | 0.078 | 1.829 | 1.981 | |
| e | 0.100 BSC | 2.54 BSC | |||
| K | 0.045 | 0.055 | 1.143 | 1.397 | |
| L | 0.575 | 0.625 | 14.605 | 15.875 | |
| L1 | 0.090 | 0.110 | 2.286 | 2.794 | |
| L2 | 0.040 | 0.055 | 1.016 | 1.397 | |
| L3 | 0.050 | 0.070 | 1.270 | 1.778 | |
| L4 | 0.010 BSC | 0.254 BSC | |||
| M | – | 0.002 | – | 0.050 | |
| ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 | |||||
Notes
- Plane B includes the maximum features of the heat sink tab and plastic.
- No more than 25 % of L1 can fall above the seating plane by max. 8 mils.
- Pin-to-pin coplanarity max. 4 mils.
- The thin lead is for SUB, and SYB.
Thick lead is for SUM, SYM, and SQM. - Use inches as the primary measurement.
- This feature is for thick lead.
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
Disclaimer
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Documents / Resources
 | VISHAY SUM70030E N-Channel MOSFET [pdf] Owner's Manual SUM70030E, SUM70030E-GE3, SUM70030E N-Channel MOSFET, SUM70030E, N-Channel MOSFET, MOSFET |
