VISHAY IRFBC40 Siliconix Power Mosfet Owner’s Manual
N-Channel MOSFET
| PRODUCT SUMMARY | ||
| VDS (V) | 600 | |
| RDS(on) (W) | VGS = 10 V | 1.2 |
| Qg max. (nC) | 60 | |
| Qgs (nC) | 8.3 | |
| Qgd (nC) | 30 | |
| Configuration | Single | |
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
AvailaAvailableble
Available
Note
This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
| ORDERING INFORMATION | |
| Package | TO-220AB |
| Lead (Pb)-free | IRFBC40PbF |
| Lead (Pb)-free and halogen-free | IRFBC40PbF-BE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 600 | V | ||
| Gate-source voltage | VGS | ± 20 | |||
| Continuous drain current | VGS at 10 V | TC = 25 °C | ID | 6.2 | A |
| TC = 100 °C | 3.9 | ||||
| Pulsed drain current a | IDM | 25 | |||
| Linear derating factor | 1.0 | W/°C | |||
| Single pulse avalanche energy b | EAS | 570 | mJ | ||
| Repetitive avalanche current a | IAR | 6.2 | A | ||
| Repetitive avalanche energy a | EAR | 13 | mJ | ||
| Maximum power dissipation | TC = 25 °C | PD | 125 | W | |
| Peak diode recovery dV/dt c | dV/dt | 3.0 | V/ns | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C | ||
| Soldering recommendations (peak temperature) d | For 10 s | 300 | |||
| Mounting torque | 6-32 or M3 screw | 10 | lbf · in | ||
| 1.1 | N · m | ||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 27 mH, Rg = 25 Ω, IAS = 6.2 A (see fig. 12)
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | 62 | °C/W |
| Case-to-sink, flat, greased surface | RthCS | 0.50 | – | |
| Maximum junction-to-case (drain) | RthJC | – | 1.0 | |
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 600 | – | – | V | |
| VDS temperature coefficient | DVDS/TJ | Reference to 25 °C, ID = 1 mA | – | 0.7 | – | V/°C | |
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 μA | 2.0 | – | 4.0 | V | |
| Gate-source leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |
| Zero gate voltage drain current | IDSS | VDS = 600 V, VGS = 0 V | – | – | 100 | μA | |
| VDS = 480 V, VGS = 0 V, TJ = 125 °C | – | – | 500 | ||||
| Drain-source on-state resistance | RDS(on) | VGS = 10 V | ID = 3.7A b | – | – | 1.2 | W |
| Forward trans conductance | gfs | VDS = 100 V, ID = 3.7 A b | 4.7 | – | – | S | |
| Dynamic | |||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 25 V,f = 1.0 MHz, see fig. 5 | – | 1300 | – | pF | |
| Output capacitance | Coss | – | 160 | – | |||
| Reverse transfer capacitance | Crss | – | 30 | – | |||
| Total gate charge | Qg | VGS = 10 V | ID = 6.2 A, VDS = 360 V,see fig. 6 and 13 b | – | – | 60 | nC |
| Gate-source charge | Qgs | – | – | 8.3 | |||
| Gate-drain charge | Qgd | – | – | 30 | |||
| Turn-on delay time | td(on) | VDD = 300 V, ID = 6.2 A,Rg = 9.1 W, RD = 47 W, see fig. 10 b | – | 13 | – | ns | |
| Rise time | tr | – | 18 | – | |||
| Turn-off delay time | td(off) | – | 55 | – | |||
| Fall time | tf | – | 20 | – | |||
| Gate input resistance | Rg | f = 1 MHz, open drain | 0.3 | – | 3.9 | W | |
| Internal drain inductance | LD | Between leaD6 mm (0.25″) from package and center of G die contactS | – | 4.5 | – | nH | |
| Internal source inductance | LS | – | 7.5 | – | |||
| Drain-Source Body Diode Characteristics | |||||||
| Continuous source-drain diode current | IS | MOSFET symbolDshowing the integral reverse Gp – n junction diodeS | – | – | 6.2 | A | |
| Pulsed diode forward current a | ISM | – | – | 25 | |||
| Body diode voltage | VSD | TJ = 25 °C, IS = 6.2 A, VGS = 0 V b | – | – | 1.5 | V | |
| Body diode reverse recovery time | trr | TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs b | – | 450 | 940 | ns | |
| Body diode reverse recovery charge | Qrr | – | 3.8 | 7.9 | μC | ||
| Forward turn-on time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) | |||||
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, TC = 25 °C
Fig. 2 – Typical Output Characteristics, TC = 150 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 8 – Maximum Safe Operating Area
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10a – Switching Time Test Circuit
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
Note
a. VGS = 5 V for logic level device Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon.
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91115.
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