VISHAY IRF530 Power MOSFET

Product Information

• Product Name: IRF530 Power MOSFET
• Brand: Vishay Siliconix]
• Package Type: D TO-220AB
• Configuration: N-Channel MOSFET
• Operating Voltage (VDS): 100V
• On-Resistance (RDS(on)): 26Ω (VGS = 10V)
• Maximum Gate Charge (Qg max.): 5.5nC
• Gate-Source Charge (Qgs): 11nC
• Gate-Drain Charge (Qgd): 0.16nC

Specifications

Product Usage Instructions

Package Installation
The IRF530 Power MOSFET is packaged in a D TO-220AB package.

Follow these steps to install the package:

1. Ensure that the power supply is disconnected.
2. Place the MOSFET on the PCB with the correct orientation, aligning the leads with the corresponding holes.
3. Tighten the screws or bolts to secure the MOSFET in place. Use a 6-32 or M3 screw with the appropriate torque.

Electrical Connections
Make the following electrical connections to use the IRF530 Power MOSFET:

• Connect the drain (D) pin to the load or circuit that requires power.
• Connect the source (S) pin to the ground or common reference point.
• Connect the gate (G) pin to the control signal or voltage source.

Operating Conditions
The IRF530 Power MOSFET operates within the following conditions:

• Operating Voltage (VDS): Up to 100V
• Gate-Source Voltage (VGS): Refer to specifications for details
• Continuous Drain Current (ID): Refer to specifications for details
• Pulsed Drain Current (IDM): Refer to specifications for details
• Operating Temperature Range (TJ): -55°C to +175°C

Thermal Management
The IRF530 Power MOSFET has thermal resistance ratings that should be taken into consideration for effective heat dissipation:

• Maximum Junction-to-Ambient Thermal Resistance (RthJA): Up to 62°C/W
• Case-to-Sink Thermal Resistance (RthCS): Up to 1.7°C/W
• Maximum Junction-to-Case Thermal Resistance (RthJC): Up to 0.50°C/W

FAQ

• Q: What is the maximum operating voltage for the IRF530 Power MOSFET?
  A: The maximum operating voltage (VDS) for the IRF530 is 100V.
• Q: What is the on-resistance of the IRF530 Power MOSFET?
  A: The on-resistance (RDS(on)) of the IRF530 is 26Ω when VGS = 10V.
• Q: What is the gate charge of the IRF530 Power MOSFET?
  A: The gate charge (Qg) of the IRF530 is 5.5nC.
• Q: What is the recommended torque for mounting the IRF530 Power MOSFET?
  A: The recommended torque for mounting the IRF530 is a 6-32 or M3 screw with the appropriate torque.

Power MOSFET

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements

Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Notes

1. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
2. VDD = 25 V, starting TJ = 25 °C, L = 528 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12)
3. ISD ≤ 14 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
4. 1.6 mm from case

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 μA		100	–	–	V
VDS temperature coefficient	DVDS/TJ	Reference to 25 °C, ID = 1 mA		–	0.12	–	V/°C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 μA		2.0	–	4.0	V
Gate-source leakage	IGSS	VGS = ± 20 V		–	–	± 100	nA
Zero gate voltage drain current	IDSS	VDS = 100 V, VGS = 0 V		–	–	25	μA
		VDS = 80 V, VGS = 0 V, TJ = 150 °C		–	–	250
Drain-source on-state resistance	RDS(on)	VGS = 10 V	ID = 8.4 A b	–	–	0.16	W
Forward transconductance	gfs	VDS = 50 V, ID = 8.4 A b		5.1	–	–	S
Dynamic
Input capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5		–	670	–	pF
Output capacitance	Coss			–	250	–
Reverse transfer capacitance	Crss			–	60	–
Total gate charge	Qg	VGS = 10 V	ID = 14 A, VDS = 80 V, see fig. 6 and 13 b	–	–	26	nC
Gate-source charge	Qgs			–	–	5.5
Gate-drain charge	Qgd			–	–	11
Turn-on delay time	td(on)	VDD = 50 V, ID = 14 A Rg = 12 W, RD = 3.6 W, see fig. 10 b		–	10	–	ns
Rise time	tr			–	34	–
Turn-off delay time	td(off)			–	23	–
Fall time	tf			–	24	–
Gate input resistance	Rg	f = 1 MHz, open drain		1.0	–	4.7	W
Internal drain inductance	LD	Between lead,                          D 6 mm (0.25″) from package and center of die contact		–	4.5	–	nH
Internal source inductance	LS			–	7.5	–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	IS	MOSFET symbol showing the integral reverse    p – n junction diode		–	–	14	A
Pulsed diode forward current a	ISM			–	–	56
Body diode voltage	VSD	TJ = 25 °C, IS = 14 A, VGS = 0 V b		–	–	2.5	V
Body diode reverse recovery time	trr	TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs b		–	150	280	ns
Body diode reverse recovery charge	Qrr			–	0.85	1.7	μC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

1. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
2. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91019.

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Documents / Resources

VISHAY IRF530 Power MOSFET [pdf] Owner's Manual IRF530PbF, IRF530PbF-BE3, IRF530 Power MOSFET, IRF530, Power MOSFET, MOSFET

References

• User Manual