SSG8214 Solid State Circuit Breaker
Specifications:
- Product Name: Solid-State Circuit Breaker
- Manufacturer: onsemi
- Components: Silicon Carbide JFETs, SiC JFETs, EliteSiC JFETs,
SiC Combo JFETs, EliteSiC MOSFETs, Gate Driver, Temperature
Sensing, Current sensing, Ground Fault Circuit Interrupter,
Wireless Communication
Product Information:
The Solid-State Circuit Breaker is a cutting-edge solution
offered by onsemi. It incorporates advanced components such as
Silicon Carbide JFETs and EliteSiC MOSFETs to provide efficient and
reliable circuit protection.
Product Usage Instructions:
1. Installation:
Follow the installation guidelines provided in the user manual.
Ensure proper connections and mounting of the circuit breaker.
2. Configuration:
Adjust the settings of the circuit breaker according to your
specific requirements. Refer to the technical documentation for
detailed configuration options.
3. Operation:
To operate the circuit breaker, apply power and monitor its
performance. Check for any abnormal behavior or faults during
operation.
FAQ:
Q: What are the advantages of using SiC Combo JFETs in the
circuit breaker?
A: SiC Combo JFETs offer lower RDS(ON) by over-drive, full
switching speed control, and junction temperature sensing compared
to standard cascode structures.
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Table of Contents
Overview Application
System Implementation Market Information & Trends
Solution Overview Solid-State Circuit Breaker Block Diagram Solid-State Switches Silicon Carbide JFETs SiC JFETs Characteristics and Advantages onsemi EliteSiC JFETs onsemi SiC Combo JFETs onsemi SiC JFET Calculator and Simulator onsemi EliteSiC MOSFETs Gate Driver Temperature Sensing Current sensing Ground Fault Circuit Interrupter Wireless Communication
Recommended Products
Complementary Products
Development Tools and Resources
Technical Documentation
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06 07 08 09 10 11 12 13 14 16 17 18 18
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Block Diagram
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Solid-State Circuit Breaker Block Diagram
The block diagram below illustrates a solid-state circuit breaker solution featuring recommended products from onsemi. The most important building block is the switch which replaces traditional electro-mechanical relays. The Gate Driver controls the switch, and the Interface allows it to communicate with the device. Another important part is Sensing which includes both current and temperature sensing. For additional functionality, GFCI can be incorporated. Other components, including power management, logic, memory and many more, can be sourced from onsemi’s comprehensive range of solutions.
Use our Interactive Block Diagrams Tool
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SiC JFET
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Silicon Carbide JFETs
Junction field effect transistor (JFET) is a type of unipolar transistor, so it only uses majority carrier type. It is similar to MOSFET as it is operated on the electric field principle, it is voltage controlled and does not require biasing current. The main difference between the two of them is that JFET is a depletion-mode device (normally on) and requires reverse bias to switch and remain off. While some semiconductor-relay applications benefit from this normally-on state, most require a default normally-off state. Addition of a few components can create a normally-off switch even without applied power.
Figure 3 shows a cross-section of SiC JFET with VGS = 0 and drain-source voltage VDS nearly zero. This represents one of the thousands of parallel cells in a JFET chip. The onsemi SiC JFET has two PN junctions (diodes): drain-to-gate and gate-to-source. In this unbiased state, a highly conductive channel exists between the Drain and Source, allowing electrons to freely flow in either direction, yielding the distinctive low on-resistance of the onsemi SiC JFET.
onsemi offers SiC JFETs, SiC Cascode JFETs and SiC Combo JFETs, each type has its unique characteristics and is suitable to different application. SiC JFET allows the SSCB to operate at up to 175 °C, which is material limit for enclosure; SiC is able to withstand even higher temperatures.
Channel
Drift region
Depletion region
Current path
SiC JFET · Normally-on SiC JFET · Lowest available Rds · RDS(VGS 2V) = 7 m, RDS(VGS 0V) = 8 m · Useful for circuit breaker and current limiting
applications · JFET VGS in the on-state is a direct measure of device
TJ, ideal for self-monitoring power devices
SiC Cascode JFET · Co-packaged Si MOSFET · Normally-off · Standard gate drive · Built-in JFET gate resistor · Suitable for fast switching applications
SiC Combo JFET
· Separate access to MOS and JFET gates enables more control of switching dV/dt
G
· Enables direct drive of JFET gate for 10-15% lower RDS(ON) at @ VGS =+2 V
· Simplifies paralleling of multiple JFETs
· Same gate drive as separate JFET + MOSFET
· Significant space savings
Figure 3: Vertical JFET structure with shown direct current path
D
G
S
D
D
JG
G
S
S
Figure 4: JFET (top), Cascode JFET (bottom left) and Combo-JFET (bottom
right) schematic symbols
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Product Value Propositions
onsemi EliteSiC Combo JFETs
40
SiC Combo JFETs UG4SC075005L8S
Integrates both a 750V SiC JFET and a low voltage Si MOSFET into a single TOLL
30
package
RDS(ON) (m)
· 750 V, 120 A · Ultra-low RDS(on): 5 m @25 °C,
20
12.2 m @175 °C
· Normally-off capability
· Improved parallel device operation
10
· Operating temperature: 175 °C (max)
· High pulse current capability · Excellent device robustness
0
· Short circuit rated
· Leadless TOLL (MO-229) package
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Combo JFET Evaluation Board
Figure 9: Comparison of RDS(on) (m) of UG4SC075005L8S and its competition
The evaluation board demonstrates the design of solid-state circuit breaker with onsemi Combo JFET device UG4SC075005L8S.
SiC Combo JFETs are composite devices consisting of a low-voltage Si MOSFET and a high-voltage SiC normally on JFET. Both gates of SiC JFET and silicon MOSFET are accessible. Compared with standard cascode structure, the SiC Combo JFET has advantages of lower RDS(ON) by over-drive, full switching speed control and junction temperature sensing.
Figure 10: Combo JFET Evaluation Board top and bottom sides
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