Findchips: HGTG11N120CND by onsemi
NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43 A, 1200 V HGTG11N120CND The HGTG11N120CND is a Non- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49303. Features · 43 A, 1200 V, TC = 25°C · 1200 V Switching SOA Capability · Typical Fall Time: 340 ns at TJ = 150°C · Short Circuit Rating · Low Conduction Loss · Thermal Impedance SPICE Model www.onsemi.com · This is Pb-Free Device www.onsemi.com TO-247-3LD CASE 340CK MARKING DIAGRAMS $Y&Z&3&K 11N120CND $Y &Z &3 &K 11N120CND = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION Part Number Package Brand HGTG11N120CND TO-247 11N120CND NOTE: When ordering, use the entire part number. © Semiconductor Components Industries, LLC, 2001 1 December, 2020 - Rev. 2 Publication Order Number: HGTG11N120CND/D HGTG11N120CND ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified) Description Symbol HGTG11N120CND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 43 A IC110 22 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (Figure 2) Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C ICM VGES VGEM SSOA PD 80 ±20 ±30 55 A at 1200 V 298 2.38 A V V W W/°C Operating and Storage Junction Temperature Range TJ, TSTG -55 to 150 °C Maximum Lead Temperature for Soldering TL 260 °C Short Circuit Withstand Time (Note 2) at VGE = 15 V tSC 8 ms Short Circuit Withstand Time (Note 2) at VGE = 12 V tSC 15 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840 V, TJ = 125°C, RG = 10 . www.onsemi.com 2 HGTG11N120CND ELECTRICAL SPECIFICATIONS (TJ = 25, °C Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Units Collector to Emitter Breakdown Voltage BVCES IC = 250 mA, VGE = 0 V 1200 - - V Collector to Emitter Leakage Current ICES VCE = 1200 V TC = 25°C - - 250 mA TC = 125°C - 300 - mA TC = 150°C - - 3.5 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = 11 A, VGE = 15 V TC = 25°C TC = 150°C - 2.1 2.4 V - 2.9 3.5 V Gate to Emitter Threshold Voltage VGE(TH) IC = 90 mA, VCE = VGE 6.0 6.8 - V Gate to Emitter Leakage Current IGES VGE = ±20 V - - ±250 nA Switching SOA SSOA TJ = 150°C, RG = 10 , VGE = 15 V, 55 - - A L = 400 mH, VCE(PK) = 1200 V Gate to Emitter Plateau Voltage VGEP IC = 11 A, VCE = 600 V - 10.4 - V On-State Gate Charge QG(ON) IC = 11 A, VCE = 600 V VGE = 15 V VGE = 20 V - 100 120 nC - 130 150 nC Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode at TJ = 25°C, ICE = 11 A, VCE = 960 V, VGE = 15 V, RG = 10 , L = 2 mH, Test Circuit (Figure 20) - 23 26 ns - 12 16 ns - 180 240 ns - 190 220 ns - 0.95 1.3 mJ - 1.3 1.6 mJ Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) td(ON)I trI td(OFF)I tfI EON EOFF IGBT and Diode at TJ = 150°C, ICE = 11 A, VCE = 960 V, VGE = 15 V, RG = 10 , L = 2 mH, Test Circuit (Figure 20) - 21 24 ns - 12 16 ns - 210 280 ns - 360 400 ns - 1.9 2.5 mJ - 2.1 2.5 mJ Diode Forward Voltage VEC IEC = 11 A - 2.6 3.2 V Diode Reverse Recovery Time trr IEC = 11 A, dlEC/dt = 200 A/ms - 60 70 ns IEC = 1 A, dlEC/dt = 200 A/ms - 32 40 ns Thermal Resistance Junction To Case RJC IGBT - - 0.42 °C/W Diode - - 1.25 °C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. www.onsemi.com 3 ICE, DC COLLECTOR CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) HGTG11N120CND TYPICAL PERFORMANCE CHARACTERISTICS 45 VGE = 15 V 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (5C) Figure 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 200 TJ = 1505C, RG = 10 W, L = 2 mH, VCE = 960 V TC = 755C, VGE = 15 V, IDEAL DIODE 100 50 ICE, COLLECTOR TO EMITTER CURRENT (A) 60 50 TJ = 1505C, RG = 10 W, VG = 15 V, L = 400 mH 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 2. MINIMUM SWITCHING SAFE OPERATING AREA 25 250 VCE = 840 V, RG = 10 W, TJ = 1255C 20 200 tSC ISC 15 150 ISC, PEAK SHORT CIRCUIT CURRENT (A) tSC, SHORT CIRCUIT WITHSTAND TIME (ms) fMAX1 = 0.05 / (td(OFF)I + td(ON)I) TC VGE fMAX2 = (PD - PC)/(EON + EOFF) 75oC 15 V 10 PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) 75oC 110oC 12 V 15 V RqJC = 0.42oC/W, SEE NOTES 110oC 12 V 5 2 5 10 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 10 100 5 50 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) Figure 4. SHORT CIRCUIT WITHSTAND TIME 50 40 30 TC = -555C 20 TC = 255C TC =1505C 50 40 TC = -555C 30 20 TC = 255C TC = 1505C ICE, COLLECTOR TO EMITTER CURRENT (A) 10 0 0 DUTY CYCLE < 0.5%, VGE = 12 V PULSE DURATION = 250ms 2 4 68 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 10 0 0 DUTY CYCLE < 0.5%, VGE = 15 V PULSE DURATION = 250ms 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) www.onsemi.com 4 EON, TURN-ON ENERGY LOSS (mJ) tdI, TURN-ON DELAY TIME (ns) HGTG11N120CND TYPICAL PERFORMANCE CHARACTERISTICS (continued) 5 RG = 10 W, L = 2 mH, VCE = 960 V 4 TJ = 1505C, VGE = 12 V, VGE = 15 V 3 2 1 TJ = 255C, VGE = 12 V, VGE = 15 V 0 0 5 10 15 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 40 RG = 10 W, L = 2 mH, VCE = 960 V TJ = 255C, TJ = 1505C, VGE = 12 V 35 30 EOFF, TURN-OFF ENERGY LOSS (mJ) 3.5 RG = 10 W, L = 2 mH, VCE = 960 V 3.0 2.5 TJ = 1505C, VGE = 12 V OR 15 V 2.0 1.5 1.0 0.5 00 TJ = 255C, VGE = 12 V OR 15 V 5 10 15 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 50 RG = 10 W, L = 2 mH, VCE = 960 V 40 TJ = 255C, TJ = 1505C, VGE = 12 V 30 trI, RISE TIME (ns) 25 20 20 15 0 TJ = 255C, TJ = 1505C, VGE = 15 V 5 10 15 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 500 RG = 10 W, L = 2 mH, VCE = 960 V 450 400 350 VGE = 12 V, VGE = 15 V, TJ = 1505C 300 250 200 150 VGE = 12 V, VGE = 15 V, TJ = 255C, 100 0 5 10 15 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT + tfI, FALL TIME (ns) 10 TJ = 255C OR TJ = 1505C, VGE = 15 V 0 0 5 10 15 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 700 RG = 10 W, L = 2 mH, VCE = 960 V 600 500 TJ = 1505C, VGE = 12 V OR 15V 400 300 200 TJ = 255C, VGE = 12 V OR 15 V 100 0 5 10 15 20 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT td(OFF), TURN-OFF DELAY TIME (ns) www.onsemi.com 5 ICE, COLLECTOR TO EMITTER CURRENT (A) C, CAPACITANCE (nF) HGTG11N120CND TYPICAL PERFORMANCE CHARACTERISTICS (continued) 100 DUTY CYCLE < 0.5%, VCE = 20 V PULSE DURATION = 250 ms 80 60 TC = 255C 40 TC = 1505C 20 TC = -555C 0 7 8 9 10 11 12 13 14 15 VGE, GATE TO EMITTER VOLTAGE (A) Figure 13. TRANSFER CHARACTERISTIC VGE, GATE TO EMITTER VOLTAGE (A) 20 IG(REF) = 1 mA, RL = 54.5 W, TC = 255C 15 VCE = 1200 V VCE = 800 V 10 VCE = 400 V 5 0 0 20 40 60 80 100 120 QG, GATE CHARGE (nC) Figure 14. GATE CHARGE WAVEFORMS 4 FREQUENCY = 1 MHz 3 CIES 2 1 COES 0 CRES 0 5 10 15 20 25 VCE, COLECTOR TO EMITTER VOLTAGE (V) Figure 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ICE, COLLECTOR TO EMITTER CURRENT (A) 15 DUTY CYCLE < 0.5%, TC = 1105C PULSE DURATION = 250 ms 12 VGE = 15 V 9 6 VGE = 10 V 3 0 0 1 2 3 4 VCE, COLECTOR TO EMITTER VOLTAGE (V) Figure 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 100 0.5 0.2 0.1 10-1 0.05 PDPD t1 t2 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 DUTY CYCLE, D = t1/t2 PEAK TJ = (PD x ZqJC x RqJC) + TC 10-2 10-1 100 t1, RECTANGULAR PULSE DURATION (s) Figure 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE ZqJC, NORMALIZED THERMAL RESPONSE www.onsemi.com 6 IF, FORWARD CURRENT (A) t, RECOVERY TIMES (ns) HGTG11N120CND TYPICAL PERFORMANCE CHARACTERISTICS (continued) 100 1505C 10 255C -555C 1 1 2 3 4 5 6 VF, FORWARD VOLTAGE (V) Figure 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 70 TJ = 255C, dIEC/dt = 200 A/ms 60 50 trr 40 30 ta 20 10 1 tb 2 5 10 20 IF, FORWARD CURRENT (A) Figure 19. RECOVERY TIMES vs FORWARD CURRENT TEST CIRCUITS AND WAVEFORMS HGTG11N120CND 10 W Figure 20. Inductive Switching Test Circuit Figure 21. SWITCHING TEST WAVEFORMS www.onsemi.com 7 HGTG11N120CND HANDLING PRECAUTIONS FOR IGBTS Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband 3. Tips of soldering irons should be grounded 4. Devices should never be inserted into or removed from circuits with power on 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended OPERATING FREQUENCY INFORMATION Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information s11hown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC + (VCE ICE)2 (eq. 1) EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE × VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE × VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A E A Q E2 D 123 L1 P A2 S B E1 A1 b4 L DATE 31 JAN 2019 P1 D2 D1 2 (2X) b2 (2X) e c (3X) b 0.25 M B A M GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DIM MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 A2 1.40 1.50 1.60 b 1.17 1.26 1.35 b2 1.53 1.65 1.77 b4 2.42 2.54 2.66 c 0.51 0.61 0.71 D 20.32 20.57 20.82 D1 13.08 ~ ~ D2 0.51 0.93 1.35 E 15.37 15.62 15.87 E1 12.81 ~ ~ E2 4.96 5.08 5.20 e ~ 5.56 ~ L 15.75 16.00 16.25 L1 3.69 3.81 3.93 P 3.51 3.58 3.65 P1 6.60 6.80 7.00 Q 5.34 5.46 5.58 S 5.34 5.46 5.58 DOCUMENT NUMBER: 98AON13851G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. DESCRIPTION: TO-247-3LD SHORT LEAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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