Samsung 1995 DRAM Databook

Overview

This document is the 1995 DRAM Databook from Samsung, providing comprehensive technical specifications and product information for their Dynamic Random-Access Memory (DRAM) components. Published in January 1995, it serves as a crucial technical reference for engineers and developers working with Samsung's semiconductor memory products from that era.

Key Product Families

The databook details a wide array of DRAM products, categorized by density and technology, including:

Various modes and features are covered, such as Fast Page Mode, Static Column Mode, Extended Data Out (EDO), and Quad CAS, across different voltage supplies (5V and 3.3V).

Technical Specifications

Each product section includes detailed datasheets with electrical characteristics, absolute maximum ratings, recommended operating conditions, AC timing characteristics, and pin configurations. The document also outlines Samsung's DRAM ordering system and provides essential information for product selection and integration.

Document Information

Published by Samsung Electronics, this databook reflects the state of DRAM technology in 1995, offering insights into the specifications and capabilities of memory components from that period. The document is printed in Korea.

PDF 1995 Samsung MOS Memory DRAM 1110-5011 Acrobat 11.0.23 Paper Capture Plug-in

Related Documents

Preview Samsung 1995 Product Guide: Transistors and Integrated Circuits
Explore the comprehensive 1995 Samsung Product Guide, detailing a wide range of transistors, including small signal, power, and low-noise types, alongside integrated circuits like CMOS, ASIC, and memory ICs. This guide provides essential technical specifications and product information for engineers and product developers.
Preview Samsung Electronics 2007 Annual Report
Samsung Electronics' 2007 Annual Report detailing financial highlights, business performance across digital media, telecommunication networks, semiconductors, and LCDs, R&D, corporate citizenship, and financial statements.