espressif ESP32-WROOM-32E Bluetooth Low Energy WiFi User Manual
espressif ESP32-WROOM-32E Bluetooth Low Energy WiFi

Overview

ESP32 -WROOM -32E is a powerful, generic WiFi -BT -BLE MCU module that targets a wide variety of applications, ranging from low -power sensor networks to the most demanding tasks, such as voice encoding, music streaming and MP3 decoding. This is a SMD Module with 2.4 GHz PCB antenna on board. It reserves π tuning circuit for antenna impedance matching. It is with all GPIOs on the pin -out except the ones already used for connecting flash. The Module’s working voltage can be range from 3.0 V to 3.6 V. Frequency range is 2400 MHz to 2483.5 MHz. External 40 MHz as clock source for system. There is also a 4 MB SPI flash for storing user programs and data. The ordering information of ESP32 -WROOM -32E is listed as follows:

ModuleChip embeddedFlashPSRAMModule dimensions (mm)
ESP32-WROOM-32EESP32-D0WD- V34 MB 1/(18.00 ± 0.10) X (25.50 ± 0.10) X(3.10 ± 0.10) mm (including metallic shield)
Notes:1.  ESP32-WROOM-32E (PCB) with 8 MB flash or 16 MB flash is available for custom order.2.  For detailed ordering information, please see Espressif Product Ordering Information.3.  For dimensions of the IPEX connector, please see Chapter 10.

At the core of the module is the ESP32 -D0WD -V3 chip*. The chip embedded is designed to be scalable and adaptive. There are two CPU cores that can be individually controlled, and the CPU clock frequency is adjustable from 80 MHz to 240 MHz. The user may also power off the CPU and make use of the low power co -processor to constantly monitor the peripherals for changes or crossing of thresholds. ESP32 integrates a rich set of peripherals, ranging from capacitive touch sensors, Hall sensors, SD card interface, Ethernet, highspeed SPI, UART, I²S and I²C

The operating system chosen for ESP32 is freeRTOS with LwIP; TLS 1.2 with hardware acceleration is built in as well. Secure (encrypted) over the air (OTA) upgrade is also supported, so that users can upgrade their products even after their release, at minimum cost and effort. Table 2 provides the specifications of ESP32 WROOM 32E.

Table 2: ESP32-WROOM-32E Specifications

CategoriesItemsSpecifications
TestReliablityHTOL/HTSL/uHAST/TCT/ESD

Wi-Fi

Protocols802.11 b/g/n20/n40
A-MPDU and A-MSDU aggregation and 0.4 s guard in-terval support
Frequency range2.412 GHz ~ 2.462GHz

Bluetooth

ProtocolsBluetooth v4.2 BR/EDR and BLE specification
RadioNZIF receiver with –97 dBm sensitivity
Class-1, class-2 and class-3 transmitter
AFH
AudioCVSD and SBC

Hardware

Module interfacesSD card, UART, SPI, SDIO, I2C, LED PWM, Motor PWM,I2S, IR, pulse counter, GPIO, capacitive touch sensor, ADC, DAC
On-chip sensorHall sensor
Integrated crystal40 MHz crystal
Integrated SPI flash4 MB
Integrated PSRAM
Operating voltage/Power supply3.0 V ~ 3.6 V
Minimum current delivered bypower supply500 mA
Recommended operating tem-perature range–40 °C ~ 85 °C
Package size(18.00±0.10) mm × (31.40±0.10) mm × (3.30±0.10) mm
Moisture sensitivity level (MSL)Level 3

Pin Definitions

Pin Layout
Pin Layout

Pin Description
ESP32 WROOM 32E has 38 pins. See pin definitions in Table 3.

NameNo.TypeFunction
GND1PGround
3V32PPower supply
EN3IModule-enable signal. Active high.
SENSOR_VP4IGPIO36, ADC1_CH0, RTC_GPIO0
SENSOR_VN5IGPIO39, ADC1_CH3, RTC_GPIO3
IO346IGPIO34, ADC1_CH6, RTC_GPIO4
IO357IGPIO35, ADC1_CH7, RTC_GPIO5
IO328I/OGPIO32, XTAL_32K_P (32.768 kHz crystal oscillator input), ADC1_CH4,TOUCH9, RTC_GPIO9
IO339I/OGPIO33, XTAL_32K_N (32.768 kHz crystal oscillator output),ADC1_CH5, TOUCH8, RTC_GPIO8
IO2510I/OGPIO25, DAC_1, ADC2_CH8, RTC_GPIO6, EMAC_RXD0
IO2611I/OGPIO26, DAC_2, ADC2_CH9, RTC_GPIO7, EMAC_RXD1
IO2712I/OGPIO27, ADC2_CH7, TOUCH7, RTC_GPIO17, EMAC_RX_DV
IO1413I/OGPIO14, ADC2_CH6, TOUCH6, RTC_GPIO16, MTMS, HSPICLK,HS2_CLK, SD_CLK, EMAC_TXD2
IO1214I/OGPIO12, ADC2_CH5, TOUCH5, RTC_GPIO15, MTDI, HSPIQ,HS2_DATA2, SD_DATA2, EMAC_TXD3
GND15PGround
IO1316I/OGPIO13, ADC2_CH4, TOUCH4, RTC_GPIO14, MTCK, HSPID,HS2_DATA3, SD_DATA3, EMAC_RX_ER
NC17
NC18
NC19
NC20
NC21
NC22
IO1523I/OGPIO15, ADC2_CH3, TOUCH3, MTDO, HSPICS0, RTC_GPIO13,HS2_CMD, SD_CMD, EMAC_RXD3
IO224I/OGPIO2, ADC2_CH2, TOUCH2, RTC_GPIO12, HSPIWP, HS2_DATA0,SD_DATA0
IO025I/OGPIO0, ADC2_CH1, TOUCH1, RTC_GPIO11, CLK_OUT1,EMAC_TX_CLK
IO426I/OGPIO4, ADC2_CH0, TOUCH0, RTC_GPIO10, HSPIHD, HS2_DATA1,SD_DATA1, EMAC_TX_ER
IO1627I/OGPIO16, HS1_DATA4, U2RXD, EMAC_CLK_OUT
IO1728I/OGPIO17, HS1_DATA5, U2TXD, EMAC_CLK_OUT_180 –
IO529I/OGPIO5, VSPICS0, HS1_DATA6, EMAC_RX_CLK
IO1830I/OGPIO18, VSPICLK, HS1_DATA7

Strapping Pins
ESP32 has five strapping pins, which can be seen in Chapter 6 Schematics:

  • MTDI
  • GPIO0
  • GPIO2
  • MTDO
  • GPIO5
    Software can read the values of these five bits from register ”GPIO_STRAPPING”

Each strapping pin is connected to its internal pull -up/pull -down during the chip reset. Consequently, if a strapping pin is unconnected or the connected external circuit is high -impedance, the internal weak pull -up/pull – down will determine the default input level of the strapping pins. To change the strapping bit values, users can apply the external pull -down/pull-up resistances, or use the host MCU’s GPIOs to control the voltage level of these pins when powering on ESP32. After reset release, the strapping pins work as normal -function pins. Refer to Table 4 for a detailed boot -mode configuration by strapping pins

Booting Mode
PinDefaultSPI BootDownload Boot
GPIO0Pull-up10
GPIO2Pull-downDon’t-care0
Enabling/Disabling Debugging Log Print over U0TXD During Booting
PinDefaultU0TXD ActiveU0TXD Silent
MTDOPull-up10
Timing of SDIO Slave
PinDefaultFalling-edge SamplingFalling-edge OutputFalling-edge SamplingRising-edge OutputRising-edge SamplingFalling-edge OutputRising-edge SamplingRising-edge Output
MTDOPull-up0011
GPIO5Pull-up0101

Note:

  • Firmware can configure register bits to change the settings of ”Voltage of Internal LDO (VDD_SDIO)” and”Timing of SDIO Slave” after booting.
  • Internal pull up resistor (R9) for MTDI is not populated in the module, as the flash and SRAM in ESP32 -32E only support a power voltage of 3.3 V (output by VDD_SDIO)

Functional Description

This chapter describes the modules and functions integrated in ESP32 -WROOM -32E

CPU and Internal Memory
ESP32 D0WD V3 contains two low power Xtensa ® 32 bit LX6 microprocessors. The internal memory includes: • 448 KB of ROM for booting and core functions.

  • 520 KB of on chip SRAM for data and instructions.
  • 8 KB of SRAM in RTC, which is called RTC FAST Memory and can be used for data storage; it is accessed by the main CPU during RTC Boot from the Deep sleep mode.
  • 8 KB of SRAM in RTC, which is called RTC SLOW Memory and can be accessed by the co processor during the Deep sleep mode.
  • 1 Kbit of eFuse: 256 bits are used for the system (MAC address and chip configuration) and the remaining 768 bits are reserved for customer applications, including flash -encryption and chip -ID.

External Flash and SRAM
ESP32 supports multiple external QSPI flash and SRAM chips. More details can be found in Chapter SPI in the ESP32 Technical Reference Manual . ESP32 also supports hardware encryption/decryption based on AES to pro -tect developers’ programs and data in flash. ESP32 can access the external QSPI flash and SRAM through high -speed caches.

  • The external flash can be mapped into CPU instruction memory space and read -only memory space simul-taneously. – When external flash is mapped into CPU instruction memory space, up to 11 MB + 248 KB can be mapped at a time. Note that if more than 3 MB + 248 KB are mapped, cache performance will be reduced due to speculative reads by the CPU. – When external flash is mapped into read-only data memory space, up to 4 MB can be mapped at a time. 8 -bit, 16 -bit and 32 -bit reads are supported.
  • External SRAM can be mapped into CPU data memory space. Up to 4 MB can be mapped at a time. 8- bit, 16 -bit and 32 -bit reads and writes are supported. ESP32 -WROOM -32E integrates a 4 MB SPI flash more memory space.

RTC and Low -Power Management
With the use of advanced power -management technologies, ESP32 can switch between different power modes. For details on ESP32’s power consumption in different power modes, pleas e refer to section ”RTC and Low – Power Management” in ESP32 User Manua

Peripherals and Sensors

Note:
External connections can be made to any GPIO except for GPIOs in the range 6 -11, 16, or 17. GPIOs 6 -11 are connected to the module’s integrated SPI flash. For details, please see Section 6 Schematics.

Electrical Characteristics

Absolute Maximum Ratings
Stresses beyond the absolute maximum ratings listed in the table below may cause permanent damage to the device. These are stress ratings only, and do not refer to the functional operation of the device that should follow the recommended operating conditions.

  1. The module worked properly after a 24-hour test in ambient temperature at 25 °C, and the IOs in three domains (VDD3P3_RTC, VDD3P3_CPU, VDD_SDIO) output high logic level to ground.
  2. Please see Appendix IO_MUX of ESP32 Datasheet for IO’s power

Recommended Operating Conditions

SymbolParameterMinTypicalMaxUnit
VDD33Power supply voltage3.03.33.6V
IV DDCurrent delivered by external power supply0.5A
TOperating temperature–4085°C

DC Characteristics (3.3 V, 25 °C)

SymbolParameterMinTypMaxUnit
CINPin capacitance2pF
VIHHigh-level input voltage0.75×VDD1VDD1+0.3V
VILLow-level input voltage–0.30.25×VDD1V
IIHHigh-level input current50nA
IILLow-level input current50nA
VOHHigh-level output voltage0.8×VDD1V
VOLLow-level output voltage0.1×VDD1V
IOHHigh-level source current (VDD1 = 3.3 V, VOH >= 2.64 V,output drive strength set to themaximum)VDD3P3_CPU power domain 1; 240mA
VDD3P3_RTC power domain 1; 240mA
VDD_SDIO power domain 1; 320mA
SymbolParameterMinTypMaxUnit
IOLLow-level sink current(VDD1 = 3.3 V, VOL = 0.495 V,output drive strength set to the maximum)28mA
RP UResistance of internal pull-up resistor45kΩ
RP DResistance of internal pull-down resistor45kΩ
VIL_nRSTLow-level input voltage of CHIP_PU to power off the chip0.6V

Notes:

  1. Please see Appendix IO_MUX of ESP32 Datasheet for IO’s power domain. VDD is the I/O voltage for a particular power domain of pins.
  2. For VDD3P3_CPU and VDD3P3_RTC power domain, per-pin current sourced in the same domain is gradually reduced from around 40 mA to around 29 mA, VOH>=2.64 V, as the number of current-source pins increases.
  3. Pins occupied by flash and/or PSRAM in the VDD_SDIO power domain were excluded from the test.

Wi-Fi Radio

ParameterConditionMinTypicalMaxUnit
Operating frequency range note124122462MHz
RF Power802.11b:26dBm802.11g:25.42dBm802.11n20:25.48dBm802.11n40:25.78dBm

dBm

Sensitivity11b, 1 Mbps–98dBm
11b, 11 Mbps–89dBm
11g, 6 Mbps–92dBm
11g, 54 Mbps–74dBm
11n, HT20, MCS0–91dBm
11n, HT20, MCS7–71dBm
11n, HT40, MCS0–89dBm
11n, HT40, MCS7–69dBm
Adjacent channel rejection11g, 6 Mbps31dB
11g, 54 Mbps14dB
11n, HT20, MCS031dB
11n, HT20, MCS713dB

Bluetooth/BLE Radio

ParameterConditionsMinTypMaxUnit
Sensitivity @30.8% PER–97dBm
Maximum received signal @30.8% PER0dBm
Co-channel C/I+10dB

Adjacent channel selectivity C/I

F = F0 + 1 MHz–5dB
F = F0 – 1 MHz–5dB
F = F0 + 2 MHz–25dB
F = F0 – 2 MHz–35dB
F = F0 + 3 MHz–25dB
F = F0 – 3 MHz–45dB

Out-of-band blocking performance

30 MHz ~ 2000 MHz–10dBm
2000 MHz ~ 2400 MHz–27dBm
2500 MHz ~ 3000 MHz–27dBm
3000 MHz ~ 12.5 GHz–10dBm
Intermodulation–36dBm

Transmitter

ParameterConditionsMinTypMaxUnit
RF Frequency24022480MHz
Gain control step3dBm
RF power control range–12+10dBm
Adjacent channel transmit powerF = F0 ± 2 MHz–52dBm
F = F0 ± 3 MHz–58dBm
F = F0 ± > 3 MHz–60dBm
f1avg265kHz
f2max247kHz
f2avg/∆ f1avg–0.92
ICFT–10kHz
Drift rate0.7kHz/50 s
Drift2kHz

Reflow Profile
Reflow Profile

Ramp -up zone — Temp.: <150 Time: 60 ~ 90s Ramp -up rate: 1 ~ 3 /s Preheating zone — Temp.: 150 ~ 200 Time: 60 ~ 120s Ramp -up rate: 0.3 ~ 0.8 /s
Reflow zone — Temp.: >217 7LPH60 ~ 90s; Peak Temp.: 235 ~ 250 (<245 recommended) Time: 30 ~ 70s
Cooling zone — Peak Temp. ~ 180 Ramp -down rate: -1 ~ -5 /s

Antenna Specifications

Antenna Specifications

Dimensions:
Dimensions

Pattern Plots:
Pattern Plots

Pattern Plots

Revision History

DateVersionRelease notes
2020.02V0.1Preliminary release for certification CE& FCC.

OEM Guidance

  1. Applicable FCC rules This module is granted by Single Modular Approval. It complies to the requirements of FCC part 15C, section 15.247 rules.
  2. The specific operational use conditions This module can be used in IoT devices. The input voltage to the module is nominally 3.3V-3.6 V DC. The operational ambient temperature of the module is -30 to 85 degree C. Only the embedded PCB antenna is allowed. Any other external antenna is prohibited.
  3. Limited module procedures N/A
  4. Trace antenna design N/A
  5. RF exposure considerations
    The equipment complies with FCC radiation exposure limits set forth for an uncontrolled environment. The equipment has the additional RF exposure evaluation necessary for portable usage of the Bluetooth radio < 20cm between the radiator and body. For the change in the module’s RF exposure condition from mobile to portable, the Wi-Fi radio is disabled.
  6. Antenna Antenna type: PCB antenna; Peak gain: 3.40dBi
  7. Label and compliance information An exterior label on OEM’s end product can use wording such as the following: “Contains Transmitter Module FCC ID: 2A9ZM-WROOM32E” or “Contains FCC ID: 2A9ZM-WROOM32E.”
  8. Information on test modes and additional testing requirements
    a)The modular transmitter has been fully tested by the module grantee on the required number of channels,modulation types, and modes, it should not be necessary for the host installer to re-test all the available transmitter modes or settings. It is recommended that the host product manufacturer, installing the modular transmitter,perform some investigative measurements to confirm that the resulting composite system does not exceed the spurious emissions limits or band edge limits (e.g., where a different antenna may be causing additional emissions).
    b)The testing should check for emissions that may occur due to the intermixing of emissions with the other transmitters, digital circuitry, or due to physical properties of the host product (enclosure). This investigation is especially important when integrating multiple modular transmitters where the certification is based on testing each of them in a stand-alone configuration. It is important to note that host product manufacturers should not assume that because the modular transmitter is certified that they do not have any responsibility for final product compliance.
    c)If the investigation indicates a compliance concern the host product manufacturer is obligated to mitigate the issue. Host products using a modular transmitter are subject to all the applicable individual technical rules as well as to the general conditions of operation in Sections 15.5, 15.15, and 15.29 to not cause interference. The operator of the host product will be obligated to stop operating the device until the interference have been corrected .
  9. Additional testing, Part 15 Sub part B disclaimer The final host / module combination need to be evaluated against the FCC Part 15B criteria for unintentional radiators in order to be properly authorized for operation as a Part 15 digital device.

FCC Warning:
Any Changes or modifications not expressly approved by the party responsible for compliance could void the user’s authority to operate the equipment. This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) This device must accept any interference received, including interference that may cause undesired operation

Documents / Resources

espressif ESP32-WROOM-32E Bluetooth Low Energy WiFi [pdf] User Manual
ESP32-WROOM-32E Bluetooth Low Energy WiFi, ESP32-WROOM-32E, Bluetooth Low Energy WiFi, Low Energy WiFi, Energy WiFi, WiFi

References

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